Transistor Amplifiers

EE

Large Signal (DC Analysis)

We only consider the values from the circuit that do not change with time. We call this the Q-Point.

  • AC Volt sources: \(\int V\ dt\) has no constants -> short circuit
  • AC Current sources: \(\int I\ dt\) has no constants -> open circuit

Consider the impedance of capacitors and inductors:

Capacitor Inductor
\(\Z_C = \frac{1}{j\omega C}\) \(\Z_L = j\omega L\)

See more here

With only DC sources, \(\omega = 0\):

  • Capacitor: \(\Z_C = \infty\) -> open circuit
  • Inductor: \(\Z_L = 0\) -> short circuit

Assume the input is a sine wave. A large signal analysis gives the middle point (Q-point) where the sine wave moves.

With the simplified circuit, analyze as usual (step by step here).

Small Signal (AC Analysis)

Small Signal is like a derivative of the circuit with respect to time.

  • DC Volt sources: \(\frac{dV}{dt} = 0\) -> short circuit
  • DC Current sources: \(\frac{dI}{dt} = 0\) -> open circuit

Consider the impedance of capacitors and inductors:

Capacitor Inductor
\(\Z_C = \frac{1}{j\omega C}\) \(\Z_L = j\omega L\)

Assuming \(\omega\) has a high value:

  • Capacitor: \(\Z_C = 0\) -> short circuit
  • Inductor: \(\Z_L = \infty\) -> open circuit

This assumption works only for high frequencies. Read more about frequency in amplifiers here.

The transistors require an extra step, shown for FETs and BJTs:

FET Small-Signal Model

Original circuit:

The transistor becomes:

  • A dependent current source \(g_m V_{gs}\) from Drain to Source, parallel to a resistor \(r_o\)
  • An open circuit at the Gate

Where:

\[g_m = 2 K_n (V_{GSQ} - V_{TN})\]

Is the transconductance,

\[r_o = \frac{1}{\lambda I_{DQ}}\]

Is the finite output resistance.

Here, the output voltage is

\[V_o = -g_m V_gs(r_o \| R_D)\]

And the input voltage is

\[V_i = V_{gs}\]

The small-signal voltage gain is defined as

\[A_v = \frac{V_o}{V_i} = -g_m (r_o \| R_D)\]

BJT Small-Signal Model

Original circuit:

The transistor becomes:

  • A dependent current source \(\beta i_b\) from Collector to Emitter, parallel to a resistor \(r_o\)
  • A resistor \(r_{\pi}\) from Base to Emitter

Where:

\[r_{\pi} = \frac{V_T}{I_{BQ}} = \frac{\beta V_T}{I_{CQ}}\]

Is the hybrid \(\pi\) model resistance.

\[r_o = \frac{V_A}{I_{CQ}}\]

Is the transistor output resistance, and \(V_A\) is the early voltage.

Here, the output voltage is

\[V_o = -R_C \beta i_b\]

And the input voltage is

\[V_i = i_b r_{\pi}\]

The small-signal voltage gain is defined as

\[A_v = \frac{V_o}{V_i} = -\frac{\beta R_C}{r_{\pi}}\]

The dependent current source may also be expressed as

\[g_m v_{be}\]

Where

\[g_m = \frac{I_{CQ}}{V_T}\]

Is the transconductance.

There is also a model with transconductance \(g_m\) but given that \(i_c = \beta i_b\) we can use this simpler approach.

For PNPs, switch the direction of the currents.


Examples

When in doubt, KVL is your best friend.

FET Amplifiers

Basic NMOS amplifier:

Solving Steps

Assume NMOS is in saturation, and \(V_{GSQ},\ V_{DD},\ V_{TN},\ K_n,\ R_D\) are given.

  1. DC Analysis: Q Point (Large Signal)
    • AC: Short Volt, Open Current Sources
    • Short Inductors, Open Capacitors
    • Get \(I_{DQ},\ V_{DSQ}\)
    • Verify \(V_{DSQ} > V_{DSQ}(sat)\) (otherwise, non-linear)
  2. AC Analysis (small signal)
    • DC: Short Volt, Open Current Sources
    • Open Inductors, Short Capacitors
    • Replace NMOS by small-signal model
    • Get \(v_{out},\ v_{in}\)
    • Voltage gain: \(A_v = \frac{v_{out}}{v_{in}}\)

FET Amplifier Comparison

Configuration \(A_v\) Input R Output R
Common source \(A_v > 1\) \(R_{TH}\) \(R_D\)
Common drain \(A_v \approx 1\) \(R_{TH}\) Low
Common source \(A_v \geq 1\) \(\frac{1}{g_m}\) \(R_D\)

BJT Amplifier Comparison

Configuration \(A_v\) Input R Output R
Common collector \(A_v > 1\) \(R_1 | R_2 | R_{ib}\) \(R_C | r_o\)
Common base \(A_v \approx 1\) \(R_1 | R_2 | R_{ib}\) \(\frac{r_{\pi}}{\beta + 1} | R_E | r_o\)
Common emitter \(A_v > 1\) \(\frac{r_{\pi}}{\beta + 1}\) \(r_o | R_C\)

Frequency

See transistors frequency here.